To provide a production method which provides a semiconductor wafer inexpensively by, as compared with a conventional method, shortening an entire production process for the semiconductor wafer and dramatically decreasing the machining allowance of the semiconductor wafer to reduce the kerf loss of semiconductor material.
The method includes: a slicing step of cutting out a thin disc-shaped raw wafer from a crystalline ingot; a fixed abrasive-grain grinding step of simultaneously grinding both surfaces of the raw wafer sandwiched between a pair of upper and lower platens each having a pad with fixed abrasive grains; a heat treating step of subjecting the raw wafer to a prescribed heat treatment after the fixed abrasive-grain grinding step; and a single-side polishing step of polishing each of both surfaces of the raw wafer after the heat treating step.
ITO WATARU
NAKAYAMA TAKASHI
Kiyoshi Kuruma
Takanashi Reiko