Title:
METHOD FOR PRODUCING A SILICON MATERIAL
Document Type and Number:
Japanese Patent JP2017114742
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for properly producing a silicon material that can serve as a good negative electrode active material.SOLUTION: A method for producing a silicon material comprises the step for a) decompressing and drying a laminar polysilane comprising water at 130-170°C and the step for b) heating the laminarpoly silane, which has undergone the a) step, at 300°C or more.SELECTED DRAWING: None
Inventors:
YUGAWA KAYOKO
Application Number:
JP2015253589A
Publication Date:
June 29, 2017
Filing Date:
December 25, 2015
Export Citation:
Assignee:
TOYOTA IND CORP
International Classes:
C01B33/027; H01M4/48
Attorney, Agent or Firm:
Patent business corporation Kyoritsu
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