Title:
METHOD OF PRODUCING SILICON NANO-WIRE
Document Type and Number:
Japanese Patent JP3849026
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To produce a silicon nano-wire having the length of several centimeters or above.
SOLUTION: In the manufacturing method, the silicon nano-wire is grown on a substrate arranged at a position where the temperature gradient of 10°C/cm is formed between 1,200-900°C in the downstream side of an inert gas stream by vaporizing a sintered compact of silicon powder in the inert gas stream.
Inventors:
Tetsuji Noda
Yu Suzuki
Hiroshi Araki
Yangbun
Nobuhiro Ishikawa
Yu Suzuki
Hiroshi Araki
Yangbun
Nobuhiro Ishikawa
Application Number:
JP2003352799A
Publication Date:
November 22, 2006
Filing Date:
October 10, 2003
Export Citation:
Assignee:
National Institute for Materials Science
International Classes:
C01B33/02; (IPC1-7): C01B33/02
Domestic Patent References:
| JP2004296750A | ||||
| JP2004292222A | ||||
| JP2002154819A |
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