To provide a method for producing a low-resistivity silicon single crystal containing a dopant at relatively high concentration by adding a large amount of the dopant to a silicon melt when the silicon single crystal is pulled while suppressing the occurrence of dislocations in the crystal.
The method for producing a silicon single crystal includes bringing a silicon seed crystal into contact with a silicon melt and pulling the silicon seed crystal while rotating it to grow a silicon single crystal having a straight body part with a diameter of mm below the silicon seed crystal. The method includes a dopant-addition process for adding a dopant to the silicon melt while rotating the silicon single crystal at a rotational speed of ω rpm (where ω≥24-(/25)) during growth of the straight body part of the silicon single crystal.
OGAWA FUKUO
KUBOTA TOSHIMICHI
| JPH03295891A | 1991-12-26 | |||
| JP2008266093A | 2008-11-06 |