Title:
METHOD FOR PRODUCING SILICON
Document Type and Number:
Japanese Patent JP2011178611
Kind Code:
A
Abstract:
To improve the reaction efficiency when Si is produced from SiHCl3.
In a method for producing silicon, H2 and a carrier gas such as Ar are introduced into a plasma generation part being an apparatus for generating pulsed thermal plasma to generate plasma including a hydrogen radical, and the generated plasma is allowed to react with SiHCl3. Since a reaction of H2 with SiHCl3 to produce SiCl4, which reaction is caused preferentially in the conventional technique, is suppressed, Si can be produced efficiently.
Inventors:
SUMIYA MASATOMO
KOINUMA HIDEOMI
ISHIGAKI TAKAMASA
AKIZUKI TOMOHIRO
KOINUMA HIDEOMI
ISHIGAKI TAKAMASA
AKIZUKI TOMOHIRO
Application Number:
JP2010044982A
Publication Date:
September 15, 2011
Filing Date:
March 02, 2010
Export Citation:
Assignee:
NAT INST FOR MATERIALS SCIENCE
International Classes:
C01B33/02; C01B33/03; C23C16/24; C23C16/515; H01L21/205