Title:
METHOD FOR PRODUCING SOLUTION FOR FORMING FERROELECTRIC THIN FILM, AND SOLUTION FOR FORMING FERROELECTRIC THIN FILM
Document Type and Number:
Japanese Patent JP2002029752
Kind Code:
A
Abstract:
To provide a solution for forming a ferroelectric thin film excellent in thermal decomposition characteristics and long-term shelf stability.
In the production of a solution for forming an SBT or SBTN ferroelectric thin film containing a dihydric alcohol and organometallic compounds of Sr, Bi, Ta and, optionally, Nb, diethylene glycol or triethylene glycol is used as the dihydric alcohol and Bi 2-ethylhexanoate, Ta diethyleneglycolate or Ta triethyleneglycolate and Nb diethyleneglycolate or Nb triethyleneglycolate are used as the organometallic compounds of Bi, Ta and Nb, respectively.
Inventors:
TSUCHIKIDA YOSHIHIKO
SOYAMA NOBUYUKI
FUKUTANI MASARU
ISHIKAWA MASAYUKI
SOYAMA NOBUYUKI
FUKUTANI MASARU
ISHIKAWA MASAYUKI
Application Number:
JP2000202518A
Publication Date:
January 29, 2002
Filing Date:
July 04, 2000
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C01G35/00; C01G33/00; H01B3/12; (IPC1-7): C01G35/00; C01G33/00; H01B3/12
Attorney, Agent or Firm:
Tsuyoshi Shigeno