Title:
高温オゾン処理を含むナノ細孔の超低誘電薄膜の製造方法
Document Type and Number:
Japanese Patent JP5730910
Kind Code:
B2
Abstract:
The present invention provides a method for preparing a nanoporous ultra-low dielectric thin film including a high-temperature ozone treatment and nanoporous ultra-low dielectric thin film prepared by the same method. The method includes preparing a mixture of an organic silicate matrix-containing solution and a reactive porogen-containing solution; coating the mixture on a substrate to form a thin film; and heating the thin film with an ozone treatment. The prepared nanoporous ultra-low dielectric thin film could have a dielectric constant of about 2.3 or less and a mechanical strength of about 10 GPa or more by improving a pore size and a distribution of pores in the thin film by performing an ozone treatment with high temperature and optimization of the ozone treatment temperature.
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Inventors:
Lee Hee
Shin Bora
Choi Kyu Yoon
Kim Bum Sok
Shin Bora
Choi Kyu Yoon
Kim Bum Sok
Application Number:
JP2012552803A
Publication Date:
June 10, 2015
Filing Date:
February 09, 2011
Export Citation:
Assignee:
Sogande Hakkyo Sunhak Hyopryokdan
International Classes:
C08J9/26; C08G77/50; H01B3/46; H01B17/56; H01B19/00; H01L21/312; H01L21/316; H01L21/768; H01L23/532
Domestic Patent References:
| JP2008177540A | ||||
| JP2007513514A | ||||
| JP2002040403A | ||||
| JP2004311532A | ||||
| JP2008199028A | ||||
| JP2004312004A |
Foreign References:
| US7208389 |
Attorney, Agent or Firm:
Kenji Emori
Masakazu Yoshida
Masakazu Yoshida
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