To provide a method for producing a vanadium tris(β-diketonate) which has a metal impurity content of ≤5 ppm and is used for forming vanadium oxide-containing thin films by a CVD method.

This method for producing the vanadium tris(β-diketonate) comprises reacting vanadium trichloride with a β-diketone, such as dipivalylmethane, and ammonia gas in a solvent mixture of toluene and ethanol, filtering off the by-produced ammonium chloride, distilling off the solvent and the unreacted raw materials, and then sublimating and recovering the vanadium tris(β-diketonate). For example, vanadium tris(dipivaloylmethanate) having a metal impurity of ≤5 ppm is produced in a yield of ≥90%.