Title:
METHOD FOR PURIFYING GAS FOR SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP2002255542
Kind Code:
A
Abstract:
To provide a method for producing an ultrahigh purity gas by purification of an impure gas.
This method for producing the ultrahigh purity gas comprises the steps of (a) passing an impure liquefied gas through a first absorbing means to remove the impurity from the liquid phase therein generating a first purified fluid, (b) a step of passing the first purified fluid through a vaporizing means to remove the impurity therein to generate a second purified gas, and (c) a step of passing the second purified gas through a second absorbing means to remove the impurity from the vapor phase therein to generate the ultrahigh purity gas.
Inventors:
SALIM SATERIA
HOLMER ARTHUR EDWARD
SHREWSBURY RONALD WILLIAM
HOLMER ARTHUR EDWARD
SHREWSBURY RONALD WILLIAM
Application Number:
JP2001378223A
Publication Date:
September 11, 2002
Filing Date:
December 12, 2001
Export Citation:
Assignee:
PRAXAIR TECHNOLOGY INC
International Classes:
B01D15/00; B01D53/26; B01D53/28; C01B21/04; C01B23/00; C01C1/02; F25J3/06; F25J3/08; H01L21/02; (IPC1-7): C01C1/02; B01D15/00; B01D53/26; B01D53/28
Attorney, Agent or Firm:
Motohiro Kurauchi (1 outside)