Title:
METHOD FOR PURIFYING SILICON TETRAFLUORIDE
Document Type and Number:
Japanese Patent JP2003128412
Kind Code:
A
Abstract:
To provide a method for obtaining purified silicon tetrafluoride gas having high purity by efficiently purifying the silicon tetrafluoride gas containing low boiling point components as impurities.
A silicon tetrafluoride gas having a reduced content of low boiling point impurities is obtained by distilling the silicon tetrafluoride gas containing low boiling point components (such as nitrogen and oxygen) as impurities by pressurizing it at 0.2 MPa-3 MPa and cooling to liquify it to -90°C--15°C.
Inventors:
ASO SHINJI
OKADA YORIKO
HARADA ISAO
INOUE HIROYUKI
YASUTAKE TAKESHI
OKADA YORIKO
HARADA ISAO
INOUE HIROYUKI
YASUTAKE TAKESHI
Application Number:
JP2001322923A
Publication Date:
May 08, 2003
Filing Date:
October 22, 2001
Export Citation:
Assignee:
MITSUI CHEMICALS INC
International Classes:
F25J3/02; C01B33/107; (IPC1-7): C01B33/107; F25J3/02