To purify a substituted hydrazine in high purity and supply to a semiconductor manufacturing apparatus under arbitrary condition by bringing a substituted hydrazine into contact with a synthetic zeolite adsorbent in vapor phase to remove water from the hydrazine and cooling and liquefying the dehydrated hydrazine.
A substituted hydrazine such as a monosubstituted hydrazine of the formula RN2 H3 (R is an alkyl), a disubstituted hydrazine of the formula R2N2H2 e.g. methylhydrazine, ethylhydrazine, 1,2-dimethylhydrazine, 1,1 dimethylhydrazine, 1,2-diethylhydrazine or 1,1diethylhydrazine is brought into contact in vapor phase with a synthetic zeolite adsorbent such as a mol.ecular sieve 3A having a pore diameter corresponding to 3 to remove the water contained in the substituted hydrazine, the dehydrated hydrazine is liquefied by cooling and the liquefied substituted hydrazine is gasified and supplied to a semiconductor production apparatus in gaseous state.
SHIMADA TAKASHI
TAKAMATSU YUKICHI
MURANAGA NAOKI
YONEYAMA GAKUO
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