Title:
METHOD FOR RECORDING NON-VOLATILE SOLID STATE MAGNETIC MEMORY
Document Type and Number:
Japanese Patent JP3932356
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for recording a novel non-volatile solid-state magnetic memory so as to provide the novel non-volatile solid-state magnetic memory which can be put to practical use by power saving.
SOLUTION: The non-volatile solid-state magnetic memory 10 of a field effect transistor structure is manufactured by sequentially forming a buffer layer 2, a recording layer 3 made of a carrier inductive ferromagnetic material and a metal electrode layer 5 via an insulating layer 4 on a substrate 1. The magnetization of the layer 3 is inverted, by applying a predetermined electric field E1 via the electrode layer, in a state in which a predetermined external magnetic field B is applied to the layer 3 and an electric field E2 so as to reduce the hole concentration in the layer 3, as compared with the case of applying the field E1, and recording operation is performed.
Inventors:
Hideo Ohno
Fumi Matsukura Thank you
Chiba Daichi
Fumi Matsukura Thank you
Chiba Daichi
Application Number:
JP2002212003A
Publication Date:
June 20, 2007
Filing Date:
July 22, 2002
Export Citation:
Assignee:
Tohoku University
International Classes:
H01L21/8246; H01L27/105; G11C11/14; G11C11/15; H01L29/82; H01L43/06; (IPC1-7): H01L27/105; H01L43/06
Domestic Patent References:
| JP11345485A | ||||
| JP2003174174A | ||||
| JP2004039017A |
Other References:
H.Ohno et. al.,Mganetotransport Properties of p-Type(in,Mn)As Diluted Magnetic III-V Semiconductors,PHYSICAL REVIEW LETTERS,米国,American Physical Society,1992年 4月27日,Volume68. Number17,P.2664-2667
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