Title:
METHOD FOR RELEASING, METHOD FOR PROCESSING, ELECTROSTATIC ATTRACTING DEVICE, AND TREATMENT APPARATUS
Document Type and Number:
Japanese Patent JP2004047511
Kind Code:
A
Abstract:
To provide a method for releasing which can rapidly and stably release a material to be attracted to be attracted by an electrostatic chuck, and to provide a method for processing, an electrostatic attracting device and a treatment apparatus.
When residual charge of a wafer, attracted to the electrostatic chuck, is removed by using a plasma of an inert gas, a destaticizing voltage Vplasma is applied to a chuck electrode. The Vplasma corresponds to a self-bias potential Vdc of the wafer at plasma application time.
Inventors:
IWAMA NOBUHIRO
YOSHITAKA HIKARI
TSUBOI YASUSHI
YOSHITAKA HIKARI
TSUBOI YASUSHI
Application Number:
JP2002199171A
Publication Date:
February 12, 2004
Filing Date:
July 08, 2002
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/3065; H01L21/68; H01L21/683; H02N13/00; (IPC1-7): H01L21/68; H01L21/3065; H02N13/00
Attorney, Agent or Firm:
Kimura Mitsuru