METHOD FOR REMOVING ASH RESIDUE OF PHOTORESIST

Title:

METHOD FOR REMOVING ASH RESIDUE OF PHOTORESIST

Document Type and Number:

Japanese Patent JP2000241992

Kind Code:

A

Abstract:

To safely and economically remove fluorine-containing residue from a semiconductor substrate.

The temperature of a semiconductor substrate is made higher than ambient temperature, and a gas and/or vapor to which fluorine-containing residue on the substrate exhibits reactivity is applied to the residue for a sufficient period of time to attain at least one of the volatilization of the residue immediately after exposure to UV and the impartation of sufficient hydrophilic property to remove the residue with deionized water to the residue. The gas and/or vapor is preferably at least one selected from the group comprising amines, alcohols, thiols, ammonia, sulfur dioxide, sulfur dioxide with oxygen, sulfur trioxide, hydrogen sulfide, carbon dioxide, carbon monoxide, carbon disulfide, carbonyl sulfide, hydrogen peroxide and water.

Inventors:

BERRY IVAN LOUIS III
ROUNDS STUART NATHAN
OWENS MICHAEL SHAWN
HALLOCK JOHN SCOTT
DAHIMENE MAHMOUD

Application Number:

JP2000042903A

Publication Date:

September 08, 2000

Filing Date:

February 21, 2000

Export Citation:

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Assignee:

EATON CORP

International Classes:

H01L21/302; G03F7/42; H01L21/02; H01L21/027; H01L21/304; H01L21/306; H01L21/3065; H01L21/311; H01L21/3213; (IPC1-7): G03F7/42; H01L21/027; H01L21/3065

Attorney, Agent or Firm:

Nobuo Kaida (3 outside)

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