Title:
METHOD OF REMOVING CARBON FROM TERA LAYER PROVIDED ON SUBSTRATE
Document Type and Number:
Japanese Patent JP3828101
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method of removing carbon from a TERA [tunable etch-resistant ARC: adjustable etch-resistant ARC (ARC represents an anti-reflection coating)] layer that is provided on a semiconductor substrate, or stripping the TERA layer.
SOLUTION: A TERA layer 26 is exposed to a plasma containing an effective dose of nitrogen, and optionally oxygen or fluorine. Moreover, the method is compatible with a fluorine based etching system. Thus, the method can be executed in the same system as other etching processes. For example, the method can be executed in the same system as that of plasma etching having fluorine of an oxide or nitride as a base. Moreover, this method includes the method of stripping the TERA layer 26 in situ, and etching an oxide layer 24 and etching a nitride layer 22 in the same etching system. In order to avoid that damages are caused to the oxide layer 24 or the nitride layer 22 below the TERA layer 26, and give good selectivity, execution is made with low ion energy.
Inventors:
Richard S. Wise
Sudanand Vie Death Foundation
Wendy Yang
Scott Dee Allen
Arpin Pee Mahorowara
Sudanand Vie Death Foundation
Wendy Yang
Scott Dee Allen
Arpin Pee Mahorowara
Application Number:
JP2003310664A
Publication Date:
October 04, 2006
Filing Date:
September 02, 2003
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L21/3065; G03F7/09; H01L21/308; H01L21/311; H01L21/768; (IPC1-7): H01L21/3065
Domestic Patent References:
| JP2001210627A | ||||
| JP2001291701A | ||||
| JP2001242630A | ||||
| JP2001345380A | ||||
| JP2003282536A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi
Yoshihiro City
Yoshihiro City
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