Title:
METHOD OF REMOVING DEPOSIT IN SEMICONDUCTOR MATERIAL OF GROUPS II-VI BY ANNEALING
Document Type and Number:
Japanese Patent JP2015038035
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method of removing deposit in a semiconductor material of groups II-VI by annealing.SOLUTION: A method of removing deposit in a solid semiconductor material showing harmonic sublimation of groups II-VI by annealing includes the following continuous steps of: heating the solid semiconductor in an inert gas flow to a temperature T between a first temperature Tcorresponding to the eutectic crystal of a compound of groups II-VI/a group VI element and a second temperature Tcorresponding to the maximum harmonic sublimation temperature; keeping the solid semiconductor material at the temperature T in a neutral gas flow for a time sufficient for removal of the deposit; cooling the solid semiconductor material from the temperature T to the ambient temperature in an inert gas flow at a cooling rate matching the harmonic sublimation line of the solid semiconductor material during cooling; and recovering the solid semiconductor material free of deposit.
Inventors:
PELLICIARI BERNARD
Application Number:
JP2014216109A
Publication Date:
February 26, 2015
Filing Date:
October 23, 2014
Export Citation:
Assignee:
COMMISSARIAT ENERGIE ATOMIQUE
International Classes:
C30B33/02; C30B29/48
Domestic Patent References:
| JPH0259485A | 1990-02-28 |
Attorney, Agent or Firm:
Yasuhiko Murayama
Masatake Shiga
Takashi Watanabe
Shinya Jitsuhiro
Masatake Shiga
Takashi Watanabe
Shinya Jitsuhiro