To provide a method for sealing a cavity, preferably a cavity where a MEMS or NEMS device is positioned, by a simple process.
A discharge step is executed by stacking a thin film layer on a sacrificial layer 2, and etching a discharge hole thereafter inside the thin film layer. At this time, the cavity is formed by removing at least a part of the sacrificial layer through the discharge hole. Prior to the discharge step, a stricture layer is formed on a side wall of the discharge hole. When the stricture layer is made a sealing layer 5, the discharge hole is closed by reflow of the sealing layer, and, when the stricture layer is not the sealing layer, the discharge hole is closed by stacking the sealing layer on top of the thin film layer and directly making the sealing layer reflow.
Mitsuo Tanaka
Mikio Takeuchi
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