Title:
自己組織化単分子層を使用する選択的堆積のための方法
Document Type and Number:
Japanese Patent JP7189321
Kind Code:
B2
Abstract:
Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.
Inventors:
Ke, Chan
Zhang, Wenyu
C, Riki
Zhang, Wenyu
C, Riki
Application Number:
JP2021506423A
Publication Date:
December 13, 2022
Filing Date:
August 08, 2019
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C16/455; C23C16/40; H01L21/31; H01L21/314; H01L21/316; H01L21/318
Domestic Patent References:
| JP2017222928A | ||||
| JP2018026532A | ||||
| JP2018512504A | ||||
| JP2016074948A |
Foreign References:
| US20180130671 | ||||
| US20180096847 | ||||
| US20180130657 | ||||
| WO2006112408A1 | ||||
| US20170037513 |
Attorney, Agent or Firm:
Sonoda & Kobayashi Patent Attorneys Corporation