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Title:
METHOD FOR SPUTTERING NITRIDE FILM, AND METHOD FOR FORMING GATE INSULATION FILM
Document Type and Number:
Japanese Patent JP2013239749
Kind Code:
A
Abstract:

To provide a method for forming a high quality and uniform nitride film capable of reducing film thickness without substantially causing leakage current.

A method for forming a nitride film or a gate insulation film comprises: a step of forming the nitride film on a substrate; and a step of exposing the nitride film to atomic hydrogen nitride NH* which is generated with plasma of Kr or Ar as inert gas to convert the film quality.


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Inventors:
OMI TADAHIRO
SUGAWA SHIGETOSHI
Application Number:
JP2013172932A
Publication Date:
November 28, 2013
Filing Date:
August 23, 2013
Export Citation:
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Assignee:
FOUND ADVANCEMENT INT SCIENCE
International Classes:
C23C8/02; H01L21/318; C23C8/36; H01L21/31; H01L21/3105; H01L21/314; H01L21/316; H01L21/336; H01L21/8238; H01L21/8247; H01L27/10; H01L27/105; H01L27/115; H01L29/423; H01L29/788; H01L29/792
Domestic Patent References:
JPH0776776A1995-03-20
JPH10199831A1998-07-31
JP2000106439A2000-04-11
JPH1060655A1998-03-03
JPH0649636A1994-02-22
JPS61183459A1986-08-16
JPH10237662A1998-09-08
JPH06192827A1994-07-12
JPH08115912A1996-05-07
JP2000260767A2000-09-22
JPH05267567A1993-10-15
JPH09172081A1997-06-30
Foreign References:
WO1998033362A11998-07-30
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito



 
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