Title:
METHOD FOR SUBSTRATE SURFACE TREATMENT, AND SUBSTRATE FOR FILM FORMATION MANUFACTURED BY THIS METHOD
Document Type and Number:
Japanese Patent JP3507883
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate surface treatment method capable of obtaining a flat crystal lattice surface of a sub-nanometer dimension, to provide a substrate for forming a film obtained by this method, and to form the thin film on the surface of the substrate.
SOLUTION: When manufacturing the substrate with flat crystal lattice surface of the sub-nanometer dimension, the surface of the single crystal ceramic substrate is treated by light heating. The substrate is preheated in a reduction atmosphere to produce a photo absorption center (color center) caused by lack in oxygen, is then light beamed to cause light energy absorption from the photo absorption center, resulting in effective and high temperature heat treatment to obtain the substrate with the flat crystal lattice surface of the sub-nanometer dimension, which is heated in an oxygen atmosphere to remove the photo absorption center. Then, the epitaxial thin film is formed on the surface of the substrate.
Inventors:
Kusumori, Takeshi
Muto, Hachizo
Muto, Hachizo
Application Number:
JP2000054221A
Publication Date:
March 15, 2004
Filing Date:
February 29, 2000
Export Citation:
Assignee:
NATL INST OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY METI
International Classes:
C30B23/02; C30B29/22; C30B29/32; (IPC1-7): C30B23/02; C30B29/22; C30B29/32
Other References:
楠森 毅 ほか，チタン酸ストロンチウム単結晶基板の表面処理技術，名古屋工業技術研究所報告，２０００年 ８月２５日，Ｖｏｌ．４９， Ｎｏ．１，ｐｐ．８７−９０