Title:
エピタキシャル膜形成用配向基板及びエピタキシャル膜形成用配向基板の表面改質方法
Document Type and Number:
Japanese Patent JP5324763
Kind Code:
B2
Abstract:
Orientation degree and smoothness of a substrate surface better than those of conventional ones are provided in a textured substrate for epitaxial thin film growth. The present invention is a textured substrate for epitaxial film formation, including a crystal orientation improving layer made of a metal thin film of 1 to 5000 nm in thickness on the surface of the textured substrate for epitaxial film formation having a textured metal layer at least on one surface, wherein differences between orientation degrees (Æ and É) in the textured metal layer surface and orientation degrees (Æ and É) in the crystal orientation improving layer surface are both 0.1 to 3.0°. Further, when another metal different from the metal constituting this textured substrate crystal orientation improving layer is added equivalent to a thin film which is 30 nm or less, and subsequently is subjected to heat treatment, the smoothness of that surface can be improved. At this time, the surface roughness of the substrate surface becomes 20 nm or less.
Inventors:
Naoji Kashima
Shigeo Nagaya
Kunihiro Shima
Shuichi Kubota
Shigeo Nagaya
Kunihiro Shima
Shuichi Kubota
Application Number:
JP2007214364A
Publication Date:
October 23, 2013
Filing Date:
August 21, 2007
Export Citation:
Assignee:
Chubu Electric Power Co., Inc.
Tanaka Kikinzoku Kogyo Co., Ltd.
Tanaka Kikinzoku Kogyo Co., Ltd.
International Classes:
C23C30/00; C25D7/00; C30B29/22; H01B12/06
Domestic Patent References:
| JP2007200831A | ||||
| JP11504612A | ||||
| JP2001518564A |
Attorney, Agent or Firm:
Patent business corporation Tanaka, Okazaki and Associates