Title:
METHOD AND SYSTEM FOR DEPOSITING DIELECTRIC THIN FILM
Document Type and Number:
Japanese Patent JP3124849
Kind Code:
B2
Abstract:
PURPOSE: To deposite s dielectric thin film stably and uniformly with high reproducibity by alternately repeating a step for depositing a thin film on a substrate and a step not depositing the thin film on the substrate while sustaining the temperature of substrate at a level allowing formation of perovskite-type thin crystal film with respect to a perovskite-type thin composite compound film composed of ABO3.
CONSTITUTION: Targets 2, 3, 4 are sintered to deposite a ferroelectric oxide (Pb0.9La0.1TiO3+0.2PbO) by 2-3μm thick on a substrate, i.e., (100) face of magnsium oxide MgO. Temperature of the substrate is appropriately set in the range of 55 to 650°C. Ratio of Ar to O2 is preferably set in the range of Ar/O2=20-5 and the pressure is set in the range of 0.1 to 0.5Pa. The targets 2, 3 are then sputtered while rotating a substrate holder 6 thus repeating deposition-non-deposition (stabilization)-deposition-non-deposition(stabilization)...periodically.
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Inventors:
Shigenori Hayashi
Kazuki Komaki
Ken Kamada
Masatoshi Kitagawa
Takashi Exit
Ryoichi Takayama
Takashi Hirao
Kazuki Komaki
Ken Kamada
Masatoshi Kitagawa
Takashi Exit
Ryoichi Takayama
Takashi Hirao
Application Number:
JP32157392A
Publication Date:
January 15, 2001
Filing Date:
December 01, 1992
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/205; C23C14/08; C23C14/34; (IPC1-7): C23C14/34; C23C14/08; H01L21/205
Domestic Patent References:
| JP369512A |
Attorney, Agent or Firm:
Hiroyuki Ikeuchi (1 person outside)