Title:
METHOD AND SYSTEM FOR DESIGNING PHOTOMASK FOR PRODUCING SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3537953
Kind Code:
B2
Abstract:
PURPOSE: To provide a method and system capable of efficiently finding out the inadequate points which are easily correctable in designing of photomask by using Revenson method.
CONSTITUTION: This method for designing photomask comprises applying stages including A1 of determining the adjacent relation of the patterns adjacent to each other within threshold S2 for the respective patterns which are transparent regions and extracting all of the combinations of the adjacent patterns for every adjacent group which is the one set connected with the adjacent relations and A2 of sorting the combinations in order of higher difficulty in correction, forming inversion relations in accordance with the sorting and determining phases in accordance with the formed inversion relations to all of the adjacent groups.
Inventors:
Uno, Hiroyoshi
Koyama, Kiyomi
Yamamoto, Kazuko
Koyama, Kiyomi
Yamamoto, Kazuko
Application Number:
JP6144696A
Publication Date:
June 14, 2004
Filing Date:
March 18, 1996
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
G03F1/30; G03F1/68; G03F1/70; G06F17/50; H01L21/027; (IPC1-7): G03F1/08; H01L21/027
Previous Patent: MAGNETIC RESONANCE DIAGNOSTIC APPARATUS
Next Patent: PRODUCTION OF RUBBER-REINFORCED STYRENE RESIN
Next Patent: PRODUCTION OF RUBBER-REINFORCED STYRENE RESIN