METHOD AND SYSTEM FOR PERFORMING DRY ETCHING

Title:

METHOD AND SYSTEM FOR PERFORMING DRY ETCHING

Document Type and Number:

Japanese Patent JPH05234959

Kind Code:

A

Abstract:

PURPOSE: To provide a dry etching method by which selective etching can be performed depending upon materials at a high selection ratio during a semiconductor manufacturing process.

CONSTITUTION: Selective etching can be performed by controlling the mass of incident ions in accordance with the constituent elements of a material to be etched and another material not to be etched, by making larger the mass difference between the constituent elements of the material to be etched and another material not to be etched, and additionally providing a hot spot temperature measuring and controlling means to a dry etching system.

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Inventors:

KUMIHASHI KOSEI
TSUJIMOTO KAZUNORI
TAJI SHINICHI

Application Number:

JP20597491A

Publication Date:

September 10, 1993

Filing Date:

August 16, 1991

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

C23F4/00; G03F7/36; H01L21/302; H01L21/3065; H01L21/308; H01L21/311; H01L21/3213; (IPC1-7): H01L21/302; C23F4/00

Attorney, Agent or Firm:

Junnosuke Nakamura (1 outside)

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Next Patent: JPS5234960