Title:
METHOD OF THERMALLY TREATING SEMICONDUCTOR POWDER
Document Type and Number:
Japanese Patent JPS5945909
Kind Code:
A
Abstract:
A method in which, at a pressure of 100 to 10<6> Pa, a) semiconductor powders consisting of CdS, CdSe, CdTe, CdS1-xSex, CdS1-xTex, CdSe1-xTex, Cd1-xZnxS, Cd1-yAg2yS or Cd1-yCuyS are treated in the presence of H2S, H2Se, H2Te and/or CS2, optionally mixed with inert gases and/or with up to 50% by volume of O2 or in the presence of a mixture of inert gases and up to 50% by volume of O2 at the boiling point of cadmium at the pressure applied in a particular case +/- 100 DEG C or b) semiconductor powders consisting of ZnS, ZnSe, ZnTe, ZnS1-xSex, ZnS1- xTex, ZnSe1-xTex, Zn1-yAg2yS or Zn1-yCuyS in the presence of H2S, H2Se, H2Te and/or CS2, optionally mixed with inert gases or up to 50% by volume of O2 at the boiling point of zinc at the pressure applied in a particular case +/- 150 DEG C, X being 0.01 to 0.99 and Y being 0.0001 to 0.20. The semiconductor powders so obtained have improved photoredox properties and are suitable, for example, for use in photodiodes, synthetic photogalvanic or photoelectrolytic cells or for the production of hydrogen by heterogeneous photoredox catalysis. For this purpose, the thermally pretreated semiconductor powders are coated at least partially with Cu, Cr, Ni, Co or a noble metal, particularly platinum.
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Inventors:
JIYAANNFURANSOWA REIBAA
NIKURAUSU BIYUURAA
KURUTO MAIYAA
MIROSU RUZEKU
NIKURAUSU BIYUURAA
KURUTO MAIYAA
MIROSU RUZEKU
Application Number:
JP13202683A
Publication Date:
March 15, 1984
Filing Date:
July 21, 1983
Export Citation:
Assignee:
CIBA GEIGY AG
International Classes:
C01G9/08; B01J19/12; B01J27/00; C01B3/04; C01B19/00; C01B19/04; C01G11/02; H01L21/477; H01L31/0248; H01L31/18; (IPC1-7): B01J19/12; B01J27/02; B01J27/04; C01B3/06; C01B17/20; C01B19/00; C01B19/04; C01G9/08; C01G11/02; H01L31/08
Attorney, Agent or Firm:
Wakabayashi Tadashi