Title:
METHOD FOR TRANSFERRING AND FORMING INSB THIN FILM
Document Type and Number:
Japanese Patent JP3158588
Kind Code:
B2
Abstract:
PURPOSE: To provide an InSb thin film transferring and forming method by which an InSb thin film which is excellent in crystallinity and high in mobility of electrons and holes can be formed on an element substrate.
CONSTITUTION: After successively forming a BaF2 buffer layer 2 and InSb thin film 3 on a thin-film forming substrate 1, the thin film 3 is coated with a cap layer 4 and the thin film 3 is annealed. Then the cap layer 4 is anodically joined with an SiO2 layer 5 on an element substrate 6. Thereafter, the buffer layer 2 is etched off with water or a weak acid and the thin film 3 is transferred to and formed on the substrate 6.
Inventors:
Eiichi Takada
Application Number:
JP35704991A
Publication Date:
April 23, 2001
Filing Date:
December 25, 1991
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
G01J1/02; G01J5/02; G01J5/28; G01R33/06; G01R33/07; G01R33/09; H01L21/203; H01L21/205; H01L33/12; H01L43/06; H01L43/08; (IPC1-7): H01L21/203; H01L43/06
Domestic Patent References:
| JP58135628A | ||||
| JP2133918A |
Attorney, Agent or Firm:
Kiyoshi Igarashi