METHOD FOR TREATING AMMONIA-CONTAINING WASTEWATER DISCHARGED FROM SEMICONDUCTOR MANUFACTURING PROCESS

Japanese Patent JP3667597

B2

PROBLEM TO BE SOLVED: To provide a method for treating ammonia-containing wastewater discharged from a semiconductor manufacturing process, capable of efficiently separating ammonia in ammonia-containing wastewater at a low cost to decomposed the same.
SOLUTION: A reverse osmosis membrane treatment process 10, a stripping treatment process 30 and a gas decomposition treatment process 50 are included. At first, ammonia-containing wastewater is subjected to reverse osmosis membrane treatment in the reverse osmosis membrane treatment process 10 to separate concentrated water. In the succeeding stripping treatment process 30, the concentrated water separated in the reverse osmosis membrane treatment process 10 is subjected to stripping treatment to take out ammonia gas. Thereafter, in the gas decomposition treatment process 50, the ammonia gas taken out in the stripping treatment process 30 is decomposed into molecular nitrogen and water using an ammonia decomposition catalyst.

Hiro people
Takefumi
Masafumi Yanaka
Hitoshi Kato
Fumio Obama
Kaoru Matsushima
Mitsuaki Ikeda
Shigeto Yoshida
Youichi Matsumoto

JP2000140499A

July 06, 2005

May 12, 2000

Click for automatic bibliography generation  

Mitsubishi Sumitomo Silicon Co., Ltd.
Sumitomo Heavy Industries Ltd.
Nippon Shokubai Co., Ltd.
Organo Corporation

B01D61/02; C02F1/20; C02F1/44; C02F1/58; C02F9/00; (IPC1-7): C02F1/58; B01D61/02; C02F1/20; C02F1/44; C02F9/00

JP2000061464A
JP8197039A
JP10202066A
JP11319804A
JP61116695A
JP63205105A
JP58219983A

Yoshiki Hasegawa
Shiro Terasaki
Noriaki Nagahama

Previous Patent: CONTROLLING METHOD AND SYSTEM OF CALL-WAITING FUNCTION IN PHS, AND PHS TERMINAL WITH CALL-WAITING FU...

Next Patent: INFORMATION PROVIDING DEVICE