Title:
METHOD FOR TREATING SILICON SLUDGE
Document Type and Number:
Japanese Patent JP2006231245
Kind Code:
A
Abstract:
To provide a method for carrying out separation treatment of a silicon crystal having good filterability in a high selection rate and also recovering hydrogen by carrying out a hydration reaction of silicon sludge and water for recovering and effectively utilizing the silicon sludge discharged from a silicon wafer production company and a semiconductor manufacturing company.
The method for carrying out the separation treatment of a silicon compound formed by the hydration reaction of the silicon sludge and water and shown by formula (I), and also recovering generated hydrogen under presence of a base catalyst such as a hydroxide of an alkaline metal or an alkaline earth metal, or a carbonate.
Inventors:
NINOMIYA AKIYUKI
UCHIDA KOUJI
FUCHI KENICHI
UCHIDA KOUJI
FUCHI KENICHI
Application Number:
JP2005051614A
Publication Date:
September 07, 2006
Filing Date:
February 25, 2005
Export Citation:
Assignee:
UCHIDA KOGYO KK
International Classes:
C02F11/00; C01B3/04; C01B33/18
Domestic Patent References:
| JP2000191303A | 2000-07-11 | |||
| JP2003238137A | 2003-08-27 |
Attorney, Agent or Firm:
Hirosaburo Mori
Toshio Mori
Shigeki Nakatsugu
Toshio Mori
Shigeki Nakatsugu