Title:
非有機物反射防止層をウエットエッチングする方法
Document Type and Number:
Japanese Patent JP2004530301
Kind Code:
A
Abstract:
The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate with a layer of silicon thereon, an inorganic anti-reflective layer applied to the layer of silicon, and a resist mask applied to the inorganic anti-reflective layer, which method comprises the steps
Inventors:
Dark, M. Notter
Johannes, van, wingarden
Maderon, G.J.Rovers
Johannes, van, wingarden
Maderon, G.J.Rovers
Application Number:
JP2002586393A
Publication Date:
September 30, 2004
Filing Date:
April 18, 2002
Export Citation:
Assignee:
Koninklijke Philips Electronics N.V.
International Classes:
C23F1/24; C09K13/04; C09K13/08; G03F7/09; H01L21/027; H01L21/28; H01L21/306; H01L21/3065; H01L21/311; H01L21/3213; H01L29/423; H01L29/49; H01L29/78; H01L21/00; (IPC1-7): H01L21/3065; H01L21/28; H01L21/3213; H01L29/423; H01L29/49; H01L29/78
Attorney, Agent or Firm:
Kenji Yoshitake
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki