Title:
METHOD OF WRITING MEMORY TRANSISTOR OF GATE INDUCTION DOUBLE LAYER
Document Type and Number:
Japanese Patent JPS53106583
Kind Code:
A
Inventors:
KURAUSU BIRUMUSUMEIYAA
Application Number:
JP2082678A
Publication Date:
September 16, 1978
Filing Date:
February 24, 1978
Export Citation:
Assignee:
ITT
International Classes:
G11C16/04; H01L21/8247; H01L29/788; G11C17/00; H01L29/792; (IPC1-7): G11C11/40; H01L29/40; H01L29/78
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