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Title:
ビーム電流センサを使用してイオンビーム装置を位置合わせするための方法及び装置
Document Type and Number:
Japanese Patent JP5084085
Kind Code:
B2
Abstract:
The present invention relates to a method for determining a relation between magnetic rigidity R of an ion beam (46) and magnetic field B required to direct the ion beam (46) along a desired path in an ion implanter, comprising the steps of: positioning a beam current sensor (120) on or adjacent to the desired path, said beam current sensor (120) having a sensing aperture (152) that is smaller than a cross-sectional dimension of the ion beam (46) at the beam current sensor (120); using the beam current sensor (120) to determine a first magnetic field B 1 required to direct a first ion beam (46) having a first magnetic rigidity R 1 along the desired path; using the beam current sensor (120) to determine a second magnetic field B 2 required to direct a second ion beam (46) having a second magnetic rigidity R 2 along the desired path; and from the values of B 1 , B 2 , R 1 and R 2 , calculating values of a 0 and a 1 in the equation: B=a 1 R+a 0 thereby providing a relation between magnetic rigidity R of an ion beam (46) and magnetic field B for the ion implanter.

Inventors:
Cuccitti, antonella
Cross, Leo, Vincent, Junior
Olson, Joseph, Sea
Peletier, Raymond, El
Earrings, case
Renau, Anthony
Sumatran, Donna
Application Number:
JP2001509060A
Publication Date:
November 28, 2012
Filing Date:
June 29, 2000
Export Citation:
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Assignee:
Varian Semiconductor Equipment Associates, Inc.
International Classes:
C23C14/48; H01J37/147; H01J37/04; H01J37/244; H01J37/304; H01J37/317; H01L21/265
Domestic Patent References:
JP8007822A
JP10294079A
JP7130324A
JP6162989A
JP11126576A
JP63152844A
JP61239557A
JP58087748A
Attorney, Agent or Firm:
Akira Hori



 
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