Title:
ビーム電流センサを使用してイオンビーム装置を位置合わせするための方法及び装置
Document Type and Number:
Japanese Patent JP5084085
Kind Code:
B2
Abstract:
The present invention relates to a method for determining a relation between magnetic rigidity R of an ion beam (46) and magnetic field B required to direct the ion beam (46) along a desired path in an ion implanter, comprising the steps of: positioning a beam current sensor (120) on or adjacent to the desired path, said beam current sensor (120) having a sensing aperture (152) that is smaller than a cross-sectional dimension of the ion beam (46) at the beam current sensor (120); using the beam current sensor (120) to determine a first magnetic field B 1 required to direct a first ion beam (46) having a first magnetic rigidity R 1 along the desired path; using the beam current sensor (120) to determine a second magnetic field B 2 required to direct a second ion beam (46) having a second magnetic rigidity R 2 along the desired path; and from the values of B 1 , B 2 , R 1 and R 2 , calculating values of a 0 and a 1 in the equation: B=a 1 R+a 0 thereby providing a relation between magnetic rigidity R of an ion beam (46) and magnetic field B for the ion implanter.
Inventors:
Cuccitti, antonella
Cross, Leo, Vincent, Junior
Olson, Joseph, Sea
Peletier, Raymond, El
Earrings, case
Renau, Anthony
Sumatran, Donna
Cross, Leo, Vincent, Junior
Olson, Joseph, Sea
Peletier, Raymond, El
Earrings, case
Renau, Anthony
Sumatran, Donna
Application Number:
JP2001509060A
Publication Date:
November 28, 2012
Filing Date:
June 29, 2000
Export Citation:
Assignee:
Varian Semiconductor Equipment Associates, Inc.
International Classes:
C23C14/48; H01J37/147; H01J37/04; H01J37/244; H01J37/304; H01J37/317; H01L21/265
Domestic Patent References:
JP8007822A | ||||
JP10294079A | ||||
JP7130324A | ||||
JP6162989A | ||||
JP11126576A | ||||
JP63152844A | ||||
JP61239557A | ||||
JP58087748A |
Attorney, Agent or Firm:
Akira Hori