Title:
金属カルコゲン化物薄層を製造する方法及び装置
Document Type and Number:
Japanese Patent JP4587247
Kind Code:
B2
Abstract:
The invention relates to a method and arrangement for producing thin metal chalcogenide layers, for example, for use as absorption or buffer layers in solar cells. The aim of the invention is to provide a method and an arrangement for easily producing homogeneous metal chalcogenide layers with consistent quality while adhering to economical and ecological points of view. To this end, the following method steps are carried out: 1. Depositing a solution of a metal compound on a substrate for the adsorption of metal ions; 2. Extracting moisture out of the substrate with the metal ions which are adsorbed on the surface thereof; 3. Introducing a gas containing chalcogen hydrogen for reacting with the adsorbed metal ions.
Inventors:
Christian fisher
Yescomerer
Rolf Konenkamp
Malta Looks-Steiner
Zuzanne G-Bentrit
Yescomerer
Rolf Konenkamp
Malta Looks-Steiner
Zuzanne G-Bentrit
Application Number:
JP2000537269A
Publication Date:
November 24, 2010
Filing Date:
March 12, 1999
Export Citation:
Assignee:
Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH
International Classes:
C01G15/00; H01L21/368; C23C8/02; C23C8/06; C23C10/22; H01L31/04; H01L31/18
Domestic Patent References:
| JP9181000A |
Attorney, Agent or Firm:
Toshio Yano
Toshiomi Yamazaki
Takuya Kuno
Hiroshi Sugimoto
Kimihiro Hoshi
Hiroyasu Ninomiya
Einzel Felix-Reinhard
Toshiomi Yamazaki
Takuya Kuno
Hiroshi Sugimoto
Kimihiro Hoshi
Hiroyasu Ninomiya
Einzel Felix-Reinhard