Title:
第3族窒化物デバイスを製造する方法およびその方法を使用して製造されたデバイス
Document Type and Number:
Japanese Patent JP5468203
Kind Code:
B2
Abstract:
A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.
Inventors:
Shuji Nakamura
Stephen Denver
John Edmond
Umesh Mishra
Charles Swoboda
Stephen Denver
John Edmond
Umesh Mishra
Charles Swoboda
Application Number:
JP2007527328A
Publication Date:
April 09, 2014
Filing Date:
May 17, 2005
Export Citation:
Assignee:
CREE INC.
International Classes:
H01L33/32; H01L33/00; H01L33/46; H01L33/10; H01L33/14; H01L33/38
Domestic Patent References:
| JP2000228563A | ||||
| JP4249384A | ||||
| JP7307529A | ||||
| JP2000196141A | ||||
| JP9116190A | ||||
| JP11505666A |
Attorney, Agent or Firm:
Koichi Tsujii
Sadao Kumakura
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda
Hiroshi Uesugi
Sadao Kumakura
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda
Hiroshi Uesugi