Title:
中性子検出器を実現するための方法、中性子検出器及びその使用
Document Type and Number:
Japanese Patent JP6768663
Kind Code:
B2
Abstract:
A method for producing a device for detecting flux of neutrons with parameters in predetermined ranges, including: one phase of determining parameters, including: simulating penetration of a flux of incident neutrons with parameters in the predetermined ranges through a modelled stack including in succession and in order at least: one first electrode; one substrate including: a first layer; and a second layer; and one second electrode; and simulating at least one defect peak created in the first layer by vacancies and/or ionization of the particles generated by collisions between neutrons of the flux of incident neutrons and atoms of the second dopant species; and identifying depth of the defect peak closest the interface between the first and second layers of the modelled stack.
Inventors:
Laurent Ottaviani
Vanessa vervish
Fatima Issa
Abdullah Ryoushi
Vanessa vervish
Fatima Issa
Abdullah Ryoushi
Application Number:
JP2017532889A
Publication Date:
October 14, 2020
Filing Date:
December 21, 2015
Export Citation:
Assignee:
INSERM(INSTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE)
Universite Dex-Marseille
Universite Dex-Marseille
International Classes:
G01T3/08
Domestic Patent References:
| JP2027776A | ||||
| JP1151242A | ||||
| JP57193073A |
Foreign References:
| US4442592 | ||||
| US5726453 |
Other References:
V.Vervisch他,Nuclear Radiation Detector based on Ion Implanted p-n Junction in 4H-SiC,2013 3rd International Conference on Advancements in Nuclear Instrumentation,Measurement Methods and their Applications ,2013年,p.1-5
Laurent Ottaviani他,Study of Defects Generated by Standard-and Plasma-Implanatation of Nitrogen Atoms in 4H-SiC Epitaxial Layers,materials Science Forum,2012年,Vol.725,p.41-44
L.Ottaviani他,Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples,Materials Science Forum,2010年,Vols.645-648,p.717-720
Laurent Ottaviani他,Study of Defects Generated by Standard-and Plasma-Implanatation of Nitrogen Atoms in 4H-SiC Epitaxial Layers,materials Science Forum,2012年,Vol.725,p.41-44
L.Ottaviani他,Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples,Materials Science Forum,2010年,Vols.645-648,p.717-720
Attorney, Agent or Firm:
Yasuhiko Murayama
Shinya Mitsuhiro
Tatsuhiko Abe
Shinya Mitsuhiro
Tatsuhiko Abe