Title:
レーザーエネルギーにより半導体材料表面を照射する方法と装置
Document Type and Number:
Japanese Patent JP5885208
Kind Code:
B2
Abstract:
The present invention is related to an apparatus for irradiating semiconductor material comprising:
- a laser generating a primary laser beam;
- an optical system;
- and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams; characterized in that the shape and/or size of the individual apertures corresponds to the shape and/or size of a common region of a semiconductor material layer to be irradiated, and that the optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the present invention is related to the use of such an apparatus in semiconductor device manufacturing.
Inventors:
Busselet, Herve
Godard, bruno
Dutems, Cyril
Godard, bruno
Dutems, Cyril
Application Number:
JP2012554310A
Publication Date:
March 15, 2016
Filing Date:
February 21, 2011
Export Citation:
Assignee:
LASER SYSTEMS AND SOLUTIONS OF EUROPE
International Classes:
H01L21/268; B23K26/00; B23K26/064; B23K26/073; H01L21/20; H01L21/265
Domestic Patent References:
| JP2002224877A | ||||
| JP2002082306A | ||||
| JP2009277900A | ||||
| JP3094989A | ||||
| JP10166174A | ||||
| JP3253035A | ||||
| JP8023105A | ||||
| JP2005109359A |
Foreign References:
| US20090032511 | ||||
| WO2006129473A1 |
Attorney, Agent or Firm:
Patent business corporation Kita Aoyama International