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Title:
酸と酸化気体との混合を使用した表面処理のための方法および装置
Document Type and Number:
Japanese Patent JP2013512559
Kind Code:
A
Abstract:
Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by combining gaseous ozone and heated sulfuric acid such that a gas/liquid dispersion or foam of ozone in sulfuric acid is applied in a layer to the wafer surface to be treated.

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Inventors:
Kumunig Robert
Selmer Reinhard
Application Number:
JP2012540513A
Publication Date:
April 11, 2013
Filing Date:
November 05, 2010
Export Citation:
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Assignee:
LAM RESEARCH AG
International Classes:
H01L21/027; G03F7/20; G03F7/42; H01L21/304
Domestic Patent References:
JP2002231683A2002-08-16
JP2008311358A2008-12-25
Foreign References:
US20080283090A12008-11-20
Attorney, Agent or Firm:
Meisei International Patent Office



 
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