Title:
プラズマ処理の均一性を改善する方法、プラズマ処理装置ならびにこれに用いるアンテナ装置
Document Type and Number:
Japanese Patent JP4928077
Kind Code:
B2
Abstract:
An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.
Inventors:
Howard Arthur M.
Cuci Andreas
Wilcoxson Mark Henry
Bailey Andrew Di. The Third
Cuci Andreas
Wilcoxson Mark Henry
Bailey Andrew Di. The Third
Application Number:
JP2004523453A
Publication Date:
May 09, 2012
Filing Date:
July 17, 2003
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
H05H1/46; H01J37/32; H01L21/3065; H01Q1/26; H01Q7/00; H01Q11/12; H01Q21/29
Domestic Patent References:
| JPH10106797A | 1998-04-24 | |||
| JP2003234338A | 2003-08-22 |
Foreign References:
| WO2001037315A1 | 2001-05-25 | |||
| WO2001045134A2 | 2001-06-21 |
Attorney, Agent or Firm:
Meisei International Patent Office