Title:
固体状態冷却システムのための方法およびシステム
Document Type and Number:
Japanese Patent JP2011514659
Kind Code:
A
Abstract:
One example discloses a heat transfer device that can comprise a semiconductor material having a first region and a second region. The first region and the second region are doped to propel a charged carrier from the first region to the second region. The heat transfer device can also comprise an array of pointed tips thermoelectrically communicating with the second region. A heat sink faces the array, and a vacuum tunneling region is formed between the pointed tips and the heat sink. The heat transfer device further can further comprise a power source for biasing the heat sink with respect to the first region. The first region defines an N-type semiconductor material and the second region defines a P-type semiconductor material.
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Inventors:
Nathanson, Harvey Sea.
Young, Robert M.
Smith, Joseph Tea.
Howell, Robert S.
Mitchell, Archer S.
Young, Robert M.
Smith, Joseph Tea.
Howell, Robert S.
Mitchell, Archer S.
Application Number:
JP2010545047A
Publication Date:
May 06, 2011
Filing Date:
January 09, 2009
Export Citation:
Assignee:
Northrop Grumman Systems Corporation
International Classes:
H01L35/32; F25B21/02; H01L23/38; H01L37/00
Domestic Patent References:
| JPH08321256A | 1996-12-03 | |||
| JP2000260301A | 2000-09-22 |
Foreign References:
| WO2005034164A1 | 2005-04-14 |
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Natsuki Morishita
Takaaki Yasumura
Natsuki Morishita