Title:
再使用型サブ構造に依拠したナノワイヤ半導体構造の計測モデル
Document Type and Number:
Japanese Patent JP7161543
Kind Code:
B2
Abstract:
Methods and systems for generating measurement models of nanowire based semiconductor structures based on re-useable, parametric models are presented herein. Metrology systems employing these models are configured to measure structural and material characteristics (e.g., material composition, dimensional characteristics of structures and films, etc.) associated with nanowire semiconductor fabrication processes. The re-useable, parametric models of nanowire based semiconductor structures enable measurement model generation that is substantially simpler, less error prone, and more accurate. As a result, time to useful measurement results is significantly reduced, particularly when modelling complex, nanowire based structures. The re-useable, parametric models of nanowire based semiconductor structures are useful for generating measurement models for both optical metrology and x-ray metrology, including soft x-ray metrology and hard x-ray metrology.
Inventors:
Shweib Houtham
Kuznetsov Alexander
Kuznetsov Alexander
Application Number:
JP2020549056A
Publication Date:
October 26, 2022
Filing Date:
March 14, 2019
Export Citation:
Assignee:
KLA Corporation
International Classes:
H01L21/66; G01J4/04; G01N23/201
Domestic Patent References:
| JP2017507479A |
Foreign References:
| US20160097983 |
Attorney, Agent or Firm:
Patent Attorney Corporation YKI International Patent Office