PURPOSE: To obtain a large contact load by letting a device be made up of the movable substrate of a cantilever, a bi-metal composed of a metallic layer having a coefficient of thermal expansion higher than that of the movable substrate, and of a heating means.
CONSTITUTION: The back face side of a cantilever 28 composed of a silicon single crystal substrate 2, is provided with a metallic layer 32 as thin as 10 to 1000μm made of Ni and the like via a conductive film 30 made of Ni, Fe, Cu and the like, and its front surface is provided with a heater circuit 14 via an oxide film 4. The free end of the cantilever 28 is provided with a contact circuit 14 via the oxide film 4, and the surface of its upper portion is provided with a conductive layer 20 as thin as 10 to 1000μm made of Ni, Au, Cr, Ag, Ta and the like at a position faced thereto via a specified space. An opposite contact section 24 as thin as 10 to 1000μm made of Ni, Fe, Cu and the like are provided. When current flows in the heater circuit, the cantilver 28 is displaced upward because of the difference in a coefficient of thermal expansion between the cantilver 28 and the metallic layer 32, the contact circuit 16 is pushed onto the opposite contact section 24, so that electricity is thereby conducted.
MATOBA KOJI
HIRATA SUSUMU
ISHII YORISHIGE
YAMASHITA ZENJIRO
OTA KENJI
