Title:
MICRO CHIP FOR FIELD-EFFECT ELECTRON EMISSION AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3898243
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a micro chip for field-effect electron emission that is capable of uniform electron emission and can be produced with high yield even in large scale application by utilizing etching rate differences and internal stress differences among a titanium binding layer, a tungsten negative electrode layer and an aluminum mask layer that are laminated on top of one another.
SOLUTION: A binding layer 12 is formed by depositing titanium on a substrate; on the top of the layer 12 a tungsten negative electrode layer 13 and an aluminum mask layer 14 are laminated by DC magnetron spattering; thereafter on this laminate, a negative electrode retaining layer 15 of a chrome pattern is formed. When this laminated structure is etched using a prescribed etchant, the layer 12 is etched instantly due to its high etching rate; a micro chip part 13 is protruded by the internal stress of the layer 13; then the layer 14 having a low etching rate is etched; thus, a chip part 13' having a projecting angle of 60 to 70° is formed with high repeatability. Thereby, a micro chip for field-effect electron emission that is capable of uniform electron emission and can be produced with high yield even in a large scale application is obtained.
Inventors:
Gold Min
Application Number:
JP24458195A
Publication Date:
March 28, 2007
Filing Date:
September 22, 1995
Export Citation:
Assignee:
SAMSUNG SDI Co., LTD.
International Classes:
H01J1/30; H01J1/304; H01J3/02; H01J9/02; (IPC1-7): H01J1/30; H01J9/02
Domestic Patent References:
| JP7254354A | ||||
| JP3225721A | ||||
| JP8510588A |
Attorney, Agent or Firm:
Hidekazu Miyoshi
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