Title:
MICROELECTRONICS STRUCTURE AND ITS FORMATION
Document Type and Number:
Japanese Patent JPH08107107
Kind Code:
A
Abstract:
PURPOSE: To produce a vertical wall pattern in a photoresist by, while using a dry-etching selective mask layer as an etching mask, to form a specified pattern in an ion-milling mask layer. CONSTITUTION: TiW 40 is patterned by a plasma method which uses CF4 gas or the equivalent. Then, the TiW 40 is used as a mask for a thick resist 40 below it. A resist 38 at a top part level is partially or entirely removed by etching, and at the same time, an ion-milling mask layer 42 is etched. The vertical wall of the ion-milling mask layer 42 is attained by dry-etching at a low pressure. A 3 level mask 36 of the vertical sidewall is used as an etching mask for ion-milling an etching interference trench 46.
Inventors:
JIEEMUZU EFU BERUCHIYAA
SUCHIIBUN ENU FURANKU
JIYON PII RONGU
JIIN JIYOONZU
SUCHIIBUN ENU FURANKU
JIYON PII RONGU
JIIN JIYOONZU
Application Number:
JP7909395A
Publication Date:
April 23, 1996
Filing Date:
April 04, 1995
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC
International Classes:
G01J1/02; B32B18/00; C04B41/53; C04B41/91; H01L21/027; H01L21/302; H01L21/3065; H01L27/14; H01L27/146; H01L37/02; (IPC1-7): H01L21/3065; B32B18/00; G01J1/02; H01L21/027; H01L27/14
Attorney, Agent or Firm:
Akira Asamura (3 outside)