Title:
マイクロメカニカル半導体加速度計
Document Type and Number:
Japanese Patent JP4932988
Kind Code:
B2
Abstract:
A precision, micro-mechanical semiconductor accelerometer of the differential-capacitor type comprises a pair of etched opposing cover layers fusion bonded to opposite sides of an etched proofmass layer to form a hermetically sealed assembly. The cover layers are formed from commercially available, Silicon-On-Insulator ("SOI") wafers to significantly reduce cost and complexity of fabrication and assembly. The functional semiconductor parts of the accelerometer are dry-etched using the BOSCH method of reactive ion etching ("RIE") thereby significantly reducing contamination inherent in prior art wet-etching processes, and resulting in features advantageously bounded by substantially vertical sidewalls.
Inventors:
Stewart, Robert, Yi.
Goldman, Arnold, Yi.
Goldman, Arnold, Yi.
Application Number:
JP2000562765A
Publication Date:
May 16, 2012
Filing Date:
July 22, 1999
Export Citation:
Assignee:
Northrop Grumman Guidance and Electronics Company, Inc.
International Classes:
G01P15/125; G01P15/08; H01L29/84
Domestic Patent References:
| JP6331651A | ||||
| JP9113534A | ||||
| JP7508835A |
Attorney, Agent or Firm:
Okabe
Masao Okabe
Nobuaki Kato
Asahi Shinmitsu
Masao Okabe
Nobuaki Kato
Asahi Shinmitsu