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Title:
MICROPATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP2005227718
Kind Code:
A
Abstract:

To provide a micropattern forming method using a highly practical fluorine-containing polymer capable of improving dry etching resistance with respect to a fluorine-containing polymer having high transparency to exposure light of a short wavelength such as F2 excimer laser light.

The micropattern forming method includes (I) a step of preparing a resist composition comprising (a) a fluorine-containing polymer containing a protective group, (b) a photoacid generator and (c) a solvent; (II) a step of forming a resist film comprising the resist composition on a substrate; (III) a step of exposing a prescribed area of the resist film; and (IV) a step of forming a micropattern by selectively removing the exposed portions of the resist film by development after the exposure, wherein the fluorine-containing polymer (a) containing the protective group is a fluorine-containing polymer comprising an OH-containing norbornene structural unit (M2-1A) and a norbornene structural unit (M2-1B) containing a saturated hydrocarbon group including a structure of a bicyclo saturated hydrocarbon as a protective group.


Inventors:
Araki, Takayuki
Yamashita, Tsuneo
Ishikawa, Takuji
Yoshida, Tomohiro
Hagiwara, Takuya
Furukawa, Takamitsu
Application Number:
JP2004000038840
Publication Date:
August 25, 2005
Filing Date:
February 16, 2004
Export Citation:
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Assignee:
DAIKIN IND LTD
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC
International Classes:
C08F214/18; C08F232/08; G03C1/492; G03F7/004; G03F7/033; G03F7/039; H01L21/027; (IPC1-7): G03F7/039; C08F214/18; C08F232/08; G03F7/033; H01L21/027
Attorney, Agent or Firm:
朝日奈 宗太
佐木 啓二
秋山 文男