Title:
MICROSCOPICALLY PROCESSED SURFACE TREATMENT AGENT
Document Type and Number:
Japanese Patent JP3188843
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce the difference in the etching rate of the oxide films having different film forming methods and conditions, or different impurity density by a method wherein a treatment agent, containing specific weight ratio of fluoric acid and ammonium fluoride, is used.
SOLUTION: An oxide film is formed by wet oxidizing a silicon wafer. Then, after a resist film has been formed into pattern shape, As is ion implanted, and an As-containing layer is formed by heat treatment. Pertaining to the two kinds of thermally oxidized films containing As as impurities and not containing As as impurities, etching treatment is conducted using a treatment solution having HF density of 0.1 to 8wt.% and NH4F density of 40 to 47wt.%. The etching rate ratio comes close to 1.0 as the NH4F density goes up becoming more desirable, and crystal is liable to be deposited. Therefore, it is necessary to control temperature in a highly precise manner.
Inventors:
Hirohisa Kikuyama
Masayuki Miyashita
Tatsuhiro Yabune
Tadahiro Ohmi
Masayuki Miyashita
Tatsuhiro Yabune
Tadahiro Ohmi
Application Number:
JP22720796A
Publication Date:
July 16, 2001
Filing Date:
August 28, 1996
Export Citation:
Assignee:
Stella Chemifa Co., Ltd.
International Classes:
C23F1/24; H01L21/308; H01L21/311; H01L21/3213; (IPC1-7): H01L21/308
Domestic Patent References:
| JP61266581A | ||||
| JP582503A | ||||
| JP3179737A | ||||
| JP63283028A | ||||
| JP7506616A |
Attorney, Agent or Firm:
Hisao Fukumori