To provide a microwave heating treatment apparatus capable of performing uniform treatment on an object to be treated, and to provide a heating treatment method.
In a microwave heating treatment apparatus 1, a wafer W is supported by a plurality of support pins 16 during anneal treatment, and the wafer W is rotated horizontally at a predetermined speed by driving a rotation drive section 17. The plurality of support pins 16 are lifted and lowered vertically together with a shaft 14 by driving a lift drive section 18, thereby variably adjusting a height position of the wafer W. Microwaves are generated by applying a voltage from a high voltage power source section 40 to a magnetron 31, and introduced through a waveguide 32 and a transmission window 33 to a space at an upper side of the wafer W rotating within a treatment vessel 2. A surface of the rotating wafer W is irradiated with microwaves introduced into the treatment vessel 2, and the wafer W is promptly heated by electromagnetic wave heating such as Joule heating, magnetic heating, and induction heating.
IKEDA TARO
KABE YOSHIRO
SHIMOMURA KOJI
HONG SEOKHYOUNG
YAMASHITA JUN
BAN MASAKAZU
KADOTA TAICHI
MAENISHI MASAYOSHI
YAMAZAKI RYOJI
Katsumi Hoshimiya
Tatsuya Josawa