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Patent Searching and Data


Title:
MICROWAVE INTRODUCING SYSTEM FOR MICROWAVE PLASMA PROCESSING DEVICE
Document Type and Number:
Japanese Patent JPH0582291
Kind Code:
A
Abstract:

PURPOSE: To generate highly efficient/highly dense plasma in a microwave plasma processing device to transform processing gas into the plasma by using an electronic cyclotron resonance phenomenon caused by a correlation of an electric field generated by means of a microwave with a magnetic field orthogonal to this electric field.

CONSTITUTION: Circumferential length in a single turn of a spiral shape antenna 1 is set approximately equal to a wave length of a microwave, and a pitch interval is set to become length of 0.1-0.5 times the wave length of the microwave. In order to radiate the microwave only in one axial direction, a metallic plate 2 is provided. In this case, an angle between the metallic plate 2 and a metallic wire of the antenna 1 is set between 12°-18°. The spiral direction is set in a clockwise direction toward the radiating direction.


Inventors:
KINOSHITA YASUSHI
Application Number:
JP27205391A
Publication Date:
April 02, 1993
Filing Date:
September 24, 1991
Export Citation:
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Assignee:
NEC CORP
International Classes:
B01J19/08; C23C16/50; C23C16/511; H05H1/46; (IPC1-7): B01J19/08; C23C16/50; H05H1/46
Attorney, Agent or Firm:
Sugano Naka