To provide a microwave plasma processing device which easily applies a prescribed treatment on the outer circumference of a processing object.
The microwave plasma processing device 1 is provided with: a tubular inner circumference wall part 30 having a slit 300; a tubular outer circumference wall part 31 arranged at the outside in axial direction of the inner circumference wall part 30; a wave-guiding passage 33 demarcated between the inner circumference wall part 30 and the outer circumference wall part 31; an irradiation part 34 which is demarcated inside in axial direction of the inner circumference wall part 30, is communicated with the wave-guiding passage 33 through the slit 300, and in which the outer circumference face 800 of the processing object 80 is arranged; and a gas supply tube 35 which supplies a plasma generating gas to the slit 300. In a nearly atmospheric pressure condition, microwave and the plasma generating gas are made to pass through the slit 300 and a high electric field is formed in the vicinity of the slit 300 to generate plasma in the irradiation part 34, and thereby a prescribed treatment is applied on the outer circumference face 800 by the plasma.
TOYODA HIROTAKA
ISHIJIMA TATSUO
UNIV NAGOYA
| JPH06226810A | 1994-08-16 | |||
| JP2003096570A | 2003-04-03 | |||
| JP2002526903A | 2002-08-20 | |||
| JP2003096570A | 2003-04-03 | |||
| JP2002526903A | 2002-08-20 | |||
| JP2005539348A | 2005-12-22 | |||
| JP2008230245A | 2008-10-02 | |||
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| JPH06226810A | 1994-08-16 |
| US3577207A | 1971-05-04 | |||
| WO2007102532A1 | 2007-09-13 |
Shindo Motoko
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