Title:
MICROWAVE SEMICONDUCTOR AMPLIFIER
Document Type and Number:
Japanese Patent JP3018703
Kind Code:
B2
Abstract:
PURPOSE: To obtain the small sized microwave semiconductor amplifier in which plural harmonic components are suppressed with less leakage.
CONSTITUTION: A harmonic suppression circuit 8 comprising parallel connection of tip open lines 10, 11 each having nearly a 1/4 wavelength with respect to plural harmonics respectively is employed for an impedance element with respect to a fundamental wave for the microwave semiconductor amplifier employing a field effect transistor(TR) 1. Moreover, the parallel circuit is formed by the microstrip line provided with a slit. Thus, the small sized microwave semiconductor amplifier is obtained, in which a large fundamental wave output is obtained with less leakage of harmonics.
Inventors:
Hajime Toyoshima
Kiyoharu Seino
Yukio Ikeda
Tadashi Takagi
Kiyoharu Seino
Yukio Ikeda
Tadashi Takagi
Application Number:
JP748592A
Publication Date:
March 13, 2000
Filing Date:
January 20, 1992
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H03F1/56; H01P1/24; H01P5/02; H03F3/193; H03F3/60; (IPC1-7): H03F3/60; H01P5/02
Domestic Patent References:
| JP6261411A | ||||
| JP1284001A | ||||
| JP59101502U | ||||
| JP60114419U |
Other References:
【文献】フレデリック・H・ラープ、「高能率増幅回路の動作クラス分け」(雑誌日経エレクトロニクス1976年8月23日号、第121~146頁)の図6
Attorney, Agent or Firm:
Kaneo Miyata (2 outside)