Title:
MICROWORKING OF SUPERCONDUCTOR THIN FILM
Document Type and Number:
Japanese Patent JPH04180270
Kind Code:
A
Abstract:
PURPOSE:To enable direct microworking of a superconductive thin film by irradiating a superconductor thin film formed on a dielectric electrooptical crystal substrate having Li2O components with high energy electron beams to make Li2O diffuse out of the surface layer of an irradiated region and by etching only a superconductive thin film at this region. CONSTITUTION:A superconductor thin film formed on a dielectric electrooptical crystal substrate having volatile components such as Li2O is irradiated with high energy electron beams according to a desired micropattern to make volatile components such as Li2O diffuse out of the surface layer of the dielectric electrooptical crystal substrate at a region irradiated with electron beams, and only the superconductive thin film at a region irradiated with electron beam only is etched. That is, upon Li2O volatilization by irradiation with electron beams from an electrooptical crystal substrate utilized, superconductive components are scattered. Therefore, the superconductor thin film substantially of the part is removed. This enables a superconductor thin film to be directly drawn and microworked with electron beams.
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Inventors:
HASHIGUCHI SHOICHI
Application Number:
JP30722890A
Publication Date:
June 26, 1992
Filing Date:
November 15, 1990
Export Citation:
Assignee:
SUMITOMO CEMENT CO
JAPAN RES DEV CORP
JAPAN RES DEV CORP
International Classes:
C30B29/22; C30B33/12; H01B12/06; H01B13/00; H01L39/24; (IPC1-7): C30B29/22; C30B33/12; H01B12/06; H01B13/00; H01L39/24
Attorney, Agent or Firm:
Kuramochi Yu